ES8308450A1 - Un dispositivo electronico acoplado en carga, tal como una memoria o un perceptor de imagen - Google Patents

Un dispositivo electronico acoplado en carga, tal como una memoria o un perceptor de imagen

Info

Publication number
ES8308450A1
ES8308450A1 ES517701A ES517701A ES8308450A1 ES 8308450 A1 ES8308450 A1 ES 8308450A1 ES 517701 A ES517701 A ES 517701A ES 517701 A ES517701 A ES 517701A ES 8308450 A1 ES8308450 A1 ES 8308450A1
Authority
ES
Spain
Prior art keywords
charge
coupled device
deinterlacing
electrodes
buffer electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES517701A
Other languages
English (en)
Spanish (es)
Other versions
ES517701A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES517701A0 publication Critical patent/ES517701A0/es
Publication of ES8308450A1 publication Critical patent/ES8308450A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287—Organisation of a multiplicity of shift registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04M—TELEPHONIC COMMUNICATION
    • H04M1/00—Substation equipment, e.g. for use by subscribers
    • H04M1/82—Line monitoring circuits for call progress or status discrimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
ES517701A 1981-11-30 1982-11-26 Un dispositivo electronico acoplado en carga, tal como una memoria o un perceptor de imagen Expired ES8308450A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8105397A NL8105397A (nl) 1981-11-30 1981-11-30 Ladingsgekoppelde inrichting.

Publications (2)

Publication Number Publication Date
ES517701A0 ES517701A0 (es) 1983-08-16
ES8308450A1 true ES8308450A1 (es) 1983-08-16

Family

ID=19838466

Family Applications (1)

Application Number Title Priority Date Filing Date
ES517701A Expired ES8308450A1 (es) 1981-11-30 1982-11-26 Un dispositivo electronico acoplado en carga, tal como una memoria o un perceptor de imagen

Country Status (11)

Country Link
US (1) US4669100A (en])
JP (1) JPS58105573A (en])
AU (1) AU550398B2 (en])
CA (1) CA1187612A (en])
DE (1) DE3243565A1 (en])
ES (1) ES8308450A1 (en])
FR (1) FR2517472B1 (en])
GB (1) GB2110874B (en])
IE (1) IE54240B1 (en])
IT (1) IT1208477B (en])
NL (1) NL8105397A (en])

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60119182A (ja) * 1983-11-30 1985-06-26 Mitsubishi Electric Corp 固体撮像素子
JPS60183881A (ja) * 1984-03-01 1985-09-19 Mitsubishi Electric Corp 固体撮像素子
CN1031156A (zh) * 1987-07-10 1989-02-15 菲利浦光灯制造公司 电荷耦合器件
US4881250A (en) * 1987-07-10 1989-11-14 U.S. Philips Corp. Compact charge-coupled device having a conductive shielding layer
NL8702499A (nl) * 1987-10-20 1989-05-16 Philips Nv Halfgeleidergeheugen met een ladingsgekoppelde inrichting.
GB2211660A (en) * 1987-10-28 1989-07-05 Philips Nv A charge-coupled device de-interlacer
EP0712238B1 (en) * 1994-11-11 1999-10-20 SANYO ELECTRIC Co., Ltd. Solid-state image pickup device and method of driving the same
JP2877047B2 (ja) * 1995-10-25 1999-03-31 日本電気株式会社 固体撮像装置
US6269484B1 (en) 1997-06-24 2001-07-31 Ati Technologies Method and apparatus for de-interlacing interlaced content using motion vectors in compressed video streams
JP2002109881A (ja) * 2000-09-28 2002-04-12 Toshiba Corp 半導体集積回路
US7483577B2 (en) * 2004-03-02 2009-01-27 Mitsubishi Electric Research Laboratories, Inc. System and method for joint de-interlacing and down-sampling using adaptive frame and field filtering
US8115863B2 (en) * 2007-04-04 2012-02-14 Freescale Semiconductor, Inc. Video de-interlacer using pixel trajectory
US8964117B2 (en) * 2007-09-28 2015-02-24 Ati Technologies Ulc Single-pass motion adaptive deinterlacer and method therefore
US8300987B2 (en) * 2007-09-28 2012-10-30 Ati Technologies Ulc Apparatus and method for generating a detail-enhanced upscaled image
US8259228B2 (en) * 2007-12-10 2012-09-04 Ati Technologies Ulc Method and apparatus for high quality video motion adaptive edge-directional deinterlacing
US8396129B2 (en) * 2007-12-28 2013-03-12 Ati Technologies Ulc Apparatus and method for single-pass, gradient-based motion compensated image rate conversion

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967254A (en) * 1974-11-18 1976-06-29 Rca Corporation Charge transfer memory
GB1551935A (en) * 1976-08-19 1979-09-05 Philips Nv Imaging devices
JPS596111B2 (ja) * 1977-11-30 1984-02-09 株式会社東芝 エリアセンサ
US4211936A (en) * 1978-06-16 1980-07-08 Rca Corporation CCD Gate electrode structures and systems employing the same
US4376897A (en) * 1980-06-25 1983-03-15 International Business Machines Corp. Low voltage serial to parallel to serial charge coupled device
EP0060198A3 (en) * 1981-03-09 1985-05-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Serial-parallel-serial charge coupled device and method of transferring charge therein
CA1187177A (en) * 1981-03-09 1985-05-14 Kalyanasundaram Venkateswaran Serial-parallel-serial charge coupled device and method of transferring charge therein
US4493060A (en) * 1981-03-09 1985-01-08 Fairchild Camera & Instrument Corp. Serial-parallel-serial charged coupled device memory and a method of transferring charge therein

Also Published As

Publication number Publication date
FR2517472A1 (fr) 1983-06-03
IT1208477B (it) 1989-07-10
ES517701A0 (es) 1983-08-16
NL8105397A (nl) 1983-06-16
AU9091282A (en) 1983-06-09
FR2517472B1 (fr) 1986-08-29
CA1187612A (en) 1985-05-21
IE822816L (en) 1983-05-30
IT8224474A0 (it) 1982-11-26
JPH0319700B2 (en]) 1991-03-15
JPS58105573A (ja) 1983-06-23
IE54240B1 (en) 1989-08-02
AU550398B2 (en) 1986-03-20
GB2110874B (en) 1985-06-12
GB2110874A (en) 1983-06-22
US4669100A (en) 1987-05-26
DE3243565C2 (en]) 1991-10-17
DE3243565A1 (de) 1983-06-09

Similar Documents

Publication Publication Date Title
ES8308450A1 (es) Un dispositivo electronico acoplado en carga, tal como una memoria o un perceptor de imagen
US3763480A (en) Digital and analog data handling devices
KR950016250A (ko) 고체촬상장치
ES2093644T3 (es) Sistema de comunicacion por radio digital y radio bidireccional.
KR900004180A (ko) 고체촬상소자
ES512336A0 (es) "una disposicion modular de almacenamiento de datos".
ES8801075A1 (es) Perfeccionamientos introducidos en un aparato para visualizar una imagen generada a partir de una senal auxiliar como inserto en la imagen generada a partir de una senal principal
KR880010422A (ko) 반도체 기억장치
KR920009201A (ko) 고체촬상장치
KR960020386A (ko) Ccd 고체 촬상 소자 및 그 구동 방법
KR860003605A (ko) 반도체 메모리 장치
KR920022542A (ko) 고체촬상장치
KR960043789A (ko) 고 전하 전달율을 갖는 ccd형 고상 이미지 픽업 소자
ES551617A0 (es) Una disposicion perceptora de imagen acoplada a la carga del tipo de transferencia de linea
KR910019054A (ko) 랜덤 악세스 메모리 소자
EP0753856A3 (en) Semiconductor memory device having circuit array structure for fast operation
KR870009589A (ko) 전하전송장치
DE3462570D1 (en) Charge-coupled semiconductor device and image sensor device of high information density
EP0377959A3 (en) A method of driving a charge detection circuit
JPS6038869A (ja) 二次元ｃｃｄイメ−ジセンサ
GB1405699A (en) Optical image sensors
GB1514653A (en) Charge-coupled-device arrangements
KR850008026A (ko) 분할된 비트라인들을 갖는 블록분할 반도체 메모리장치
ES554374A0 (es) Un dispositivo electronico acoplado por carga para almacenamiento y transferencia de informacion, utilizable particularmente con detector de imagen en una camara.
KR850001614A (ko) Eeprom형 메모리 시스템

Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 19971001